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| STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 - 11 A - TO-220/FP- D2PAK - TO-247 MDmeshTM Power MOSFET Features Type STB11NM80 STF11NM80 STP11NM80 VDSS 800 V 800 V 800 V RDS(on) < 0.40 < 0.40 < 0.40 < 0.40 RDS(on)*Qg 14*nC 14*nC 14*nC 14*nC ID 11 A 11 A 11 A 11 A 3 1 TO-247 DPAK STW11NM80 800 V Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description The MDmeshTM associates the multiple drain process with the Company's PowerMeshTM horizontal layout assuring an outstanding low onresistance. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Table 1. Device summary Marking B11NM80 F11NM80 P11NM80 W11NM80 Package DPAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80 December 2007 Rev 9 1/17 www.st.com 17 Contents STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/DPAK/ TO-247 VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor VISO TJ Tstg Insulation withstand voltage (DC) Operating junction temperature Storage temperature 11 8 44 150 1.2 --65 to 150 800 30 11 (1) 8 (1) 44 (1) 35 0.28 2500 Unit TO-220FP V V A A A W W/C V C 1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter TO-220/DPAK/ TO-247 Unit TO-220FP 3.6 C/W C/W C Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.83 62.5 300 Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50 V) Value 2.5 400 Unit A mJ 3/17 Electrical characteristics STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 5.5 A 3 4 0.35 Min. 800 10 100 100 5 0.40 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 7.5A VDS =25 V, f=1 MHz, VGS=0 VDD=640 V, ID = 11 A VGS =10 V (see Figure 10) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain VDD=400 V, ID= 5.5 A, RG=4.7 , VGS=10 V (see Figure 17) Min. Typ. 8 1630 750 30 43.6 11.6 21 Max. Unit S pF pF pF nC nC nC Gate input resistance 2.7 Turn-on delay time Rise time Turn-off delay time Fall time 22 17 46 15 ns ns ns ns 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VGS=0 ISD=11 A, di/dt = 100 A/s, VDD=50 V, Tj=25 C ISD=11 A, di/dt = 100 A/s, VDD=50 V, Tj=150 C 612 7.22 23.6 970 11.25 23.2 Test conditions Min Typ. Max 11 44 0.86 Unit A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/17 Electrical characteristics STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / DPAK / TO-247 Figure 3. Thermal impedance for TO-220 / DPAK / TO-247 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Output characteristics 6/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 8. Transfer characteristics Figure 9. Electrical characteristics Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Static drain-source on resistance 7/17 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 15. Normalized on resistance vs temperature Figure 16. Normalized BVDSS vs temperature 8/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/17 Package mechanical data STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 12/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 13/17 Package mechanical data STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 14/17 G STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 15/17 Revision history STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 6 Revision history Table 8. Date 30-Sep-2004 26-Nov-2005 07-Apr-2006 15-May-2006 20-Jul-2006 20-Dec-2007 Revision history Revision 4 5 6 7 8 9 Preliminary version Complete version Modified value on Figure 8 New dv/dt value on Table 5 The document has been reformatted Updated ID value on Table 2: Absolute maximum ratings Changes 16/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17 |
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